IRF1010 MOSFET N-Channel 60V @ 75A

Producto nº: AD41436
Tu precio: US$1,50
No. de artículos en existencia: 5
Disponibilidad: En existencia

Description:

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Para más detalles ver hoja de datos: IRF1010 Datasheet.pdf (417654)

 

This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.