IRF420 N-Channel Power MOSFET 500V@2.5A
| Producto nº: | AD38745 |
| Tu precio: | US$11,95 |
| No. de artículos en existencia: | 8 |
| Disponibilidad: | En existencia |
Description:
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Para más detalles ver hoja de datos: IRF420 - IRF423 Datasheet.pdf (139860)
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.